机读格式显示(MARC)

• 000 00895cam a2200289 a 4500

• 001 0000346737

• 003 CAL

• 005 20200901133300.0

• 008 700306s1970 njua 000 0 eng

• 010 __ |a 73095899

• 020 __ |a 0815502958

• 040 __ |a DLC |c DLC |d CWR |d m.c

• 050 00 |a TK7871.85 |b .S557

• 090 __ |a TN30/S623

• 093 __ |a TN30 |2 4

• 094 __ |a 73.67/S623

• 099 __ |a CAL 022003127979

• 100 1_ |a Sittig, Marshall, |d 1919- |0 CAL n2004383565# |7 ba0yba0y

• 245 10 |a Doping and semiconductor junction formation / |c Marshall Sitting.

• 260 __ |a Park Ridge, N.J. : |b Noyes Data Corp., |c 1970.

• 300 __ |a 318 p. : |b illus. ; |c 27 cm.

• 490 1_ |a Electronics materials review ; |v no. 4

• 500 __ |a "Based on the U.S. patent literature since 1960."

• 650 _0 |a Semiconductors.

• 650 _0 |a Semiconductor doping.

• 830 _0 |a Electronics materials review ; |v no. 4.

• 998 __ |a NMU