机读格式显示(MARC)

• 000 01219cam a2200265 a 4500

• 001 0000328475

• 003 CAL

• 005 20200723160500.0

• 008 860919s1987 waua b 001 0 eng d

• 020 __ |a 0892527587

• 040 __ |a BUPTL |c SJT

• 090 __ |a TN365-53/E34

• 093 __ |a TN365-53 |2 5

• 099 __ |a CAL 021999651560 |a CAL 022000311959 |a CAL 022001118113

• 100 1_ |a Eichen, Elliot.

• 245 00 |a Progress in semiconductor laser diodes : |b 25-26 September 1986, Cambridge, Massachusetts / |c Elliot Eichen, chair-editor ; sponsored by SPIE--the International Society for Optical Engineering ; cooperating organizations, Center for Applied Optics/University of Alabama in Huntsville ... [et al.].

• 260 __ |a Bellingham, Wash., USA : |b The Society, |c c1987.

• 300 __ |a vi, 117 p. : |b ill. ; |c 28 cm.

• 440 _0 |a Proceedings of SPIE--the International Society for Optical Engineering ; |v v. 723

• 504 __ |a Includes bibliographical references and index.

• 650 _0 |a Semiconductor lasers |v Congresses.

• 700 1_ |a Eichen, Elliot. |0 CAL n2005067212# |7 ba0yba0y

• 710 2_ |a Society of Photo-optical Instrumentation Engineers.

• 710 2_ |a University of Alabama in Huntsville. |b Center for Applied Optics.

• 998 __ |a SJT