机读格式显示(MARC)

• 000 00913nam a2200301 a 4500

• 001 0000158930

• 003 CAL

• 005 20060926093700.0

• 008 060926s1994 nyua b 001 0 eng

• 010 __ |a 92020705

• 020 __ |a 047185641X (acid-free paper)

• 037 __ |b 7166684 |c 441.00

• 040 __ |a DLC |c DLC |d DLC

• 090 __ |a TN4/C454

• 093 __ |a TN4 |2 4

• 099 __ |a CAL 022000348629

• 100 1_ |a Chang, C. Y., |d 1937-

• 245 10 |a GaAs high-speed devices : |b physics, technology, and circuit applications / |c C.Y. Chang, Francis Kai.

• 260 __ |a New York : |b Wiley, |c c1994.

• 300 __ |a xiv, 612 p. : |b ill. ; |c 27 cm.

• 500 __ |a "A Wiley Interscience publication."

• 504 __ |a Includes bibliographical references and index.

• 650 _0 |a Gallium arsenide semiconductors.

• 650 _0 |a Integrated circuits.

• 700 1_ |a Kai, Francis, |d 1956-

• 920 __ |a 211130 |z 1

• 920 __ |a 245010 |z 1

• 998 __ |a XJT