机读格式显示(MARC)

• 000 01069cam a2200277 a 4500

• 001 0000346815

• 003 CAL

• 005 20201028160600.0

• 008 070896q1983 fr a 101 0 eng

• 035 __ |a CAL 022000336594

• 040 __ |a SJT |c SJT

• 041 0_ |a eng

• 090 __ |a O471/I61

• 093 __ |a O471 |2 3

• 099 __ |a CAL 022000336594 |a CAL 022001464597

• 111 2_ |a International Conference "Properties and Structure of Dislocations in Semiconductors" |d (1983 : |c Aussois, France)

• 245 10 |a Proprietes et structure des dislocations dans les semiconducteurs = |b Properties and structure of dislocations in semiconductors.

• 260 __ |a Les Ulis : |b Editions de physique, |c [1983?]

• 300 __ |a 1 v. (various pagings) : |b ill. ; |c 26 cm.

• 440 _0 |a Journal de Physique |v colloque C-4, supplement au no. 9

• 504 __ |a Includes bibliographical references and index.

• 650 _0 |a Semiconductors |x Congresses.

• 650 _0 |a Dislocations in crystals |x Congresses.

• 740 0_ |a Properties and structure of dislocations in semiconductors.

• 920 __ |a 243040 |z 1

• 998 __ |a SJT