机读格式显示(MARC)

• 000 01209cam a2200325 a 4500

• 001 0000341646

• 003 CAL

• 005 20200826083200.0

• 008 810417m19811983gw a b 001 0 eng

• 010 __ |a 81005354 //r83

• 020 __ |a 3540105182 (Berlin : V.1)

• 020 __ |a 0387105182 (U.S. : v. 1)

• 020 __ |a 3540115153 (Berlin : v.2)

• 020 __ |a 0387115153 (U.S. : v. 2)

• 040 __ |c PUL

• 090 __ |a O474/L292/1

• 093 __ |a O474 |2 4

• 099 __ |a CAL 022000286789 |a CAL 021999664272 |a CAL 021999664271 |a CAL 022000888482

• 100 1_ |a Lannoo, M. |q (Michel), |d 1942- |0 CAL n2005136073# |7 ba0yba0y

• 245 10 |a Point defects in semiconductors / |c M. Lannoo, J. Bourgoin.

• 260 __ |a Berlin ; |a New York : |b Springer-Verlag, |c 1981-1983.

• 300 __ |a 2 v. : |b ill. ; |c 24 cm.

• 440 _0 |a Springer series in solid-state sciences ; |v 22, 35

• 500 __ |a Vol. 2 by J. Bourgoin, M. Lannoo, with a foreword by G.D. Watkins.

• 504 __ |a Includes bibliographical references and index.

• 505 0_ |a 1. Theoretical aspects -- 2. Experimental aspects.

• 650 _0 |a Semiconductors |x Defects.

• 650 _0 |a Point defects.

• 700 1_ |a Bourgoin, J. |q (Jacques), |d 1938- |0 CAL n2005026183# |7 ba0yba0y

• 998 __ |a PUL