机读格式显示(MARC)

• 000 00816cam 2200265 a 4500

• 001 0000156538

• 003 CAL

• 005 20060914095500.0

• 008 060914s1976 nyua b 00100 eng

• 010 __ |a 76041175

• 020 __ |a 0070637512

• 040 __ |c SJT

• 090 __ |a 73.76

• 093 __ |a TN7

• 094 __ |a 73.76 |2 3

• 099 __ |a CAL 022000331043

• 245 00 |a MOS and special-purpose bipolar integrated circuits and R-F power transistor circuit design / |c edited by Bryan Norris.

• 260 __ |a New York : |b McGraw Hill, |c c1976.

• 300 __ |a 228 p. : |b ill. ; |c 26 cm.

• 490 0_ |a Texas Instruments electronics series

• 504 __ |a Includes bibliographical references and index.

• 650 _0 |a Integrated circuits.

• 650 _0 |a Metal oxide semiconductors.

• 650 _0 |a Field-effect transistors.

• 700 1_ |a Norris, Bryan.