机读格式显示(MARC)

• 000 01229cam a2200301 a 4500

• 001 0000333141

• 003 CAL

• 005 20200810145600.0

• 008 830420s1983 wb a b 101 0 eng d

• 010 __ |a 83006689 //r84

• 020 __ |a 3540124918 (Berlin)

• 020 __ |a 0387124918 (U.S.)

• 040 __ |c WUL

• 050 00 |a TK7871.85 |b .I5864 1983

• 090 __ |a TN305.3/I61

• 093 __ |a TN305.3 |2 3rd

• 099 __ |a CAL 022000386737 |a CAL 022000327085 |a CAL 022000634940 |a CAL 022000885113

• 111 2_ |a International Conference on Ion Implantation: Equipment and Techniques |n (4th : |d 1982 : |c Berchtesgaden, Germany)

• 245 10 |a Ion implantation : |b equipment and techniques : proceedings of the Fourth International Conference, Berchtesgaden, Fed. Rep. of Germany, September 13-17, 1982 / |c editors, H. Ryssel and H. Glawischnig.

• 260 __ |a Berlin ; |a New York : |b Springer-Verlag, |c 1983.

• 300 __ |a x, 556 p. : |b ill. ; |c 24 cm.

• 490 0_ |a Springer series in electrophysics ; |v v. 11

• 504 __ |a Includes bibliographical references and index.

• 650 _0 |a Semiconductor doping |v Congresses.

• 650 _0 |a Ion implantation |v Congresses.

• 700 1_ |a Glawischnig, H. |q (Hans), |d 1939-

• 700 1_ |a Ryssel, Heiner, |d 1941-

• 998 __ |a SJT